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| 04M0 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION 100V 300mA MONOLITHIC DIODE ARRAY 5 * * * * FEATURES: INDIVIDUAL DIODES EQUIVALENT TO 1N4148 Vf MATCH TO 5 mV at 10 mA ULTRA-HIGH SPEED SWITCHING QUAD ISOLATED DIODES C C .049" Absolute Maximum Ratings: Symbol Parameter Limit 100 300 500 -65 to +150 -65 to +200 Unit Vdc mAdc mAdc C C VBR(R) *1 *2 Reverse Breakdown Voltage IO *1 Continuous Forward Current IFSM *1 Peak Surge Current (tp= 1/120 s) Top Operating Junction Temperature Range Tstg Storage Temperature Range NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% C C .023" A A A A Electrical Characteristics (Per Diode) @ 25C unless otherwise specified Symbol Parameter Conditions Min Max BV1 BV2 Vf1 IR1 IR2 Ct tfr trr VF5 NOTE 1: Breakdown Voltage IR = 100uAdc Breakdown Voltage IR = 5uAdc Forward Voltage IF = 100mAdc *1 Reverse Current VR = 40 Vdc Reverse Current VR = 20 Vdc Capacitance (pin to pin) VR = 0 Vdc; f = 1 MHz Forward Recovery Time IF = 100mAdc Reverse Recovery Time IF = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms Forward Voltage Match IF = 10 mA Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge 100 75 1 0.1 25 4.0 15 5 5 Unit Vdc uAdc nAdc pF ns ns mV Packaging Options: W: Wafer (100% probed) (sample probed) D: Chip (Waffle Pack) Metallization Options: Standard: Al Top (No Dash #) U: Wafer B: Chip (Vial) Processing Options: Standard: Capable of JANTXV application (No Suffix) Suffix C: Commercial ORDERING INFORMATION PART #: 04M0_ _- _ First Suffix Letter: Packaging Option Second Suffix Letter: Processing Option Dash #: Metallization Option / Au Backside Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice. MSC1023.PDF Rev - 11/25/98 |
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